FLIESSZONENVERFAHREN ZUR HERSTELLUNG VON MONOKRISTALLINEM SILICIUM AUS TEILCHENFOERMIGEM SILICIUM
摘要
The present invention is a float-zone process for forming particulate silicon into monocrystalline silicon. The process employs a reusable silicon conduit having a lower end heated to form a melt zone and an upper end provided with a means for delivering a controlled amount of particulate silicon to the melt zone. A monocrystal silicon seed is used to pull a monocrystalline silicon ingot from the melt zone and particulate silicon is added to the melt zone to replenish silicon removed as monocrystalline silicon.
申请公布号
DE4216519(A1)
申请公布日期
1993.02.04
申请号
DE19924216519
申请日期
1992.05.19
申请人
HEMLOCK SEMICONDUCTOR CORP., HEMLOCK, MICH., US
发明人
BOURBINA, MICHAEL, MIDLAND, MICH., US;WHEELOCK, SCOTT ALLEN, BAY CITY, MICH., US;MCCORMICK, JAMES ROBERT, MIDLAND, MICH., US