| 摘要 |
PURPOSE:To facilitate the control of diffusion depth in the diffusion step to form a current path region in the title semiconductor light emitting element of current constriction structure. CONSTITUTION:An n-AlGaAs lower clad layer 2, a GaAs active layer 3, a p-AlGaAs upper clad layer 4, a p-AlGaAs diffusion stopper layer 5, an n- AlGaAs current block layer 6 and a p-AlGaAs cap layer 7 are successively deposited on an n-GaAs substrate 1. Later, Zn is diffused from the p-AlGaAs cap layer 7 to the p-AlGaAs diffusion stopper layer 5 to form a p-Zn diffused region (current path region). At this time, the diffusion rate in the stopper layer 5 is made lower than that in the current block layer 6. Finally, a p side electrode 8 and an n side electrode 9 are formed respectively on the cap layer 7 and on the rear surface of the substrate 1. |
