发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION AND PRODUCITON OF RESIST PATTERN
摘要 PURPOSE:To obtain a positive type photoresist compsn. for super fine working having high resolution suitable for superfine working by incorporating an alkali soluble resin and specified compds. to the compsn. CONSTITUTION:The resist compsn. contains an alklai soluble resin and one or more kinds of compds. expressed by formula I. In formula I, m and n are 2 or 3 and D1 and D2 are hydrogen atoms, naphthoquinone-1,2-diazide-5-sulfonyl groups, etc. D1 and D2 may be same or different and all D1 or all D2 may be same or different. At least one of D1 and D2 is naphthoquinone-1,2-diazide-5- sulfonyl group. etc. R1 and R2 are hydrogen atoms, halogen atoms, etc., and may be same or different.
申请公布号 JPH04361264(A) 申请公布日期 1992.12.14
申请号 JP19910137471 申请日期 1991.06.10
申请人 HITACHI CHEM CO LTD 发明人 NUNOMURA MASATAKA;HASHIMOTO MICHIAKI;KASUYA KEI;KATO KOJI
分类号 G03F7/022;H01L21/027 主分类号 G03F7/022
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