| 摘要 |
PURPOSE:To provide a liquid phase epitaxial growth method which can easily epitaxially grow single crystals different in kind. CONSTITUTION:Fused liquid 3 for growing first conductivity type, inside a graphite crucible 1, and fused liquid 4 for growing second conductivity type, outside it, are filled. A substrate 6 is dipped in this inner fused liquid 3 so as to epitaxially grow first conductivity type of SiC single crystals on the substrate 6, and then this fused liquid 3 is made to overflow to mix the inner fused liquid 3 with the outer fused liquid 4, and by the compensating effect, the conductivity type is changed to epitaxially grow second conductivity type SiC single crystals on the substrate 6. |
