发明名称 Semiconductor integrated circuit device with multi-level wiring structure
摘要 In a multi-level wiring structure of an IC device, an intermediate insulating layer on a portion of a field insulating layer where wiring layers are absent thereabove is selectively removed so that a gas gap is formed between lower wiring layers.
申请公布号 US5164334(A) 申请公布日期 1992.11.17
申请号 US19900633796 申请日期 1990.12.26
申请人 NEC CORPORATION 发明人 MIZUSHIMA, KAZUYUKI
分类号 H01L21/768;H01L23/482;H01L23/522 主分类号 H01L21/768
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