FIELD EMISSION TYPE EMITTER AND METHOD OF MANUFACTURING THEREOF

摘要

The field emission type emitter comprises a conductive substrate (101), an insulating film (102) formed on the conductive substrate (101), a cavity (102a) formed in the insulating film (102), a cathode (103) formed on the conductive substrate (101) in the cavity (102a), and a gate electrode (105) formed over the insulating film (102). The gate electrode (105) is preferably made of refractory metal silicide. A polycrystalline silicon film (104) is preferably formed between the gate electrode (105) and the insulating film (102). The side walls of the insualating film in the portion of the cavity (102a) preferably have an inverse tapered shape. In the case where as glass substrate (201 in Fig. 5) is used, a conductive film (203) is formed on the glass substrate through an insulating film (202) and the cathode (205) is formed on the conductive film (203) in the cavity (204a). Low cost manufacturing methods of the field emission type emitter are also disclosed. The invention provides for the advantages that a stable structure of the cathode (103;205) and the gate electrode (105) are achieved such that large area field emission type emitter array flat panel displays can be produced with satisfying long time results.