| 摘要 |
A method and apparatus for substantially preventing undesired residual dopants or other impurities from becoming incorporated in growing epitaxial layers of silicon carbide during CVD by avoiding the use of a susceptor for CVD epitaxial growth is disclosed. During the CVD process, the substrate is suspended substantially out of physical contact with any other solid object while a suitable surface of the semiconductor substrate is contacted with source gases that will form epitaxial layers of silicon carbide thereon. Heating during the CVD process is performed, according to the present invention, by inductively heating the substrate using an induction frequency to which the substrate material is sufficiently responsive to heat the substrate to the temperatures required for CVD of silicon carbide.
|
