发明名称 High resolution mask and method of fabrication thereof
摘要 There is described a unique mask and method of making same. The mask is especially useful in high resolution fabrication techniques such as in making magnetic bubble domain structures, semiconductor device structures and the like. The mask includes a relatively thin membrane of suitable density and material to be substantially transparent to various types of radiation such as, but not limited to, E-beams, x-rays and the like. A pattern of material which is substantially opaque to the same radiation is provided on the membrane. To the extent necessary, a suitable auxiliary support member is attached to the membrane for supporting same.
申请公布号 US4284678(A) 申请公布日期 1981.08.18
申请号 US19800113006 申请日期 1980.01.17
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 JONES, ADDISON B.
分类号 G03F1/14;(IPC1-7):B32B3/00;B32B27/00;B05D3/06 主分类号 G03F1/14
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