| 摘要 |
PURPOSE:To simplify the interconnection between elements by providing the following: a semiconductor substrate; a trench hole formed in the vertical direction in one main face of the semiconductor substrate; and a high-resistance interconnection connected electrically to the semiconductor substrate at the bottom part of the trench hole. CONSTITUTION:A high-resistance interconnection composed of a polycrystalline silicon film 8 is formed in the vertical direction in a silicon substrate 1 by using a trench hole 6 formed in the silicon substrate 1; polycrystalline silicon 82 is connected electrically to the silicon substrate 1 at the bottom part of the trench hole 6. The silicon substrate 1 is connected to a power supply; the high-resistance interconnection 82 is connected to the power-supply side at the bottom part of the trench hole 6. Thereby, it is not required to draw a power supply line at a memory cell part, and the interconnection between elements can be simplified. |
