| 摘要 |
PURPOSE:To reduce a leakage current and to form a capacitor having a dielectric film whose specific permittivity is large by a method wherein a thin metal film is irradiated with a high energy beam in an oxidizing atmosphere, it is charged to a metal oxide film, the dielectric film for a capacitor is produced and a counter electrode for the capacitor is formed on the dielectric film. CONSTITUTION:A thin metal film 5 used to constitute a dielectric film for a capacitor is formed on a barrier film 4; the thin metal film 5 is irradiated with a high energy beam, melted and solidified; the film is charged to a metal oxide film; the dielectric film for the capacitor is produced; a counter electrode 3 for the capacitor is formed on the dielectric film. As a result, a crystal defect and a pinhole hardly exist in the thin metal film 5; the film can be formed as a uniform and good-quality film. The polycrystallization of a metal oxide which is caused when a substance is moved during a reaction process is not caused. Thereby, an electric current which is leaked along a grain boundary is reduced, and the capacitor having the dielectric film whose specific permittivity is large can be obtained. |
