发明名称 Process for deposition of inorganic materials
摘要 The subject invention comprises forming a plurality of positively charged ions of an ionizable coating material in an ion formation area. A deposition area is provided at a predetermined distance from the ion formation area. This deposition area is capable of being negatively charged for attracting the positively charged ions of the ionizable coating material. Next, the deposition area is negatively charged so that a uniform, substantially parallel flow path is formed for the ionizable coating material between the ion formation area and the negatively charged deposition area. A substrate is then positioned between the ion formation and deposition areas within the uniform, substantially parallel flow path, and preferably perpendicular to the flow path. The positively charged ions of the coating material are released from the ion formation area into the flow path, and are moved within the flow path by the attraction of the positively charged ions toward the negatively charged deposition area. This results in a uniform deposition of a thin layer of the coating material onto the surface of the substrate which faces the ion formation area within the ionized coating material flow path. The process of this invention can be controlled so that the formation of the positively charged ions is confined within the ion formation area and, when the formation of the positively charged ions is completed, the release of the positively charged ions is controlled so that it is conducted when the substrate is positioned.
申请公布号 US5128173(A) 申请公布日期 1992.07.07
申请号 US19900581588 申请日期 1990.09.12
申请人 MICRON TECHNOLOGY, INC. 发明人 KUGAN, S. ANANDA
分类号 C23C14/32 主分类号 C23C14/32
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