摘要 |
The present invention relates to a method for the metal organic chemical vapour deposition of a Group 15 and/or a Group 16 element on a substrate, characterized in that the method comprises employing as a feedstock at least one compound of the formula R2EER2, RE'E'R, R2EE'R, R2EE'ER2, RE(E'R)2 or E(E'R)3, wherein E is a Group 15 element, E' is a Group 16 element and R is an organic ligand. The present invention also provides methods for p-type doping of a II-VI semiconductor and N-type doping of a III-V semiconductor involving the method described above. A novel compound, ethyltellurodiethylstibine (Et2SbTeEt) is also described. |