| 摘要 |
<p>PURPOSE:To allow a gate wiring resistance to have an initial resistance value continuously even after machining wherein the resistance is exposed to an oxidizing atmosphere and to place a thin film transistor (TFT) in stable and normal operation by coating a low-resistance gate electrode wiring layer of Al, Cu, etc., with a surface protection film. CONSTITUTION:A glass substrate is used as a transparent substrate 1, a Cu film which forms a gate electrode 12 and an Si film which forms the surface protection film 13 are adhered successively in order, and a scanning signal electrode and the gate electrode 12 are formed from them. Then an SiO2 film is formed as a gate insulating film 14 and then an operation semiconductor layer 15 and an alpha-Si film are formed by a normal TFT forming method; and a contact layer 16 and an n+alpha-Si film are formed across a separation groove and Ti films are formed thereupon as a source electrode 17 and a drain electrode 18 to manufacture the TFT 10.</p> |
