| 摘要 |
<p>PURPOSE:To enable characteristics evaluation with wafers warped easily under high controllability by measuring characteristics of a semiconductor device formed on a wafer after the wafer is mounted on the surface of a vacuum chuck curved in the surface and vacuum-sucked to warp along the surface of the vacuum chuck. CONSTITUTION:When the surface of a vacuum chuck 11 is concave, a wafer 2 is warped concave upward in the surface of the chuck by vacuum suction. When the surface of a vacuum chuck 12 is convex, the wafer 2 is warped convex upward in the surface of the chuck by vacuum suction. A vacuum chuck 13 concave in the surface is overlapped as option on a normal vacuum chuck 1 flat in the surface, and vacuum suction is made by overlapping suction holes of both chucks. The wafer 2 is warped concave upward in the surface of the chuck by vacuum suction. After a wafer is mounted on the surface of a vacuum chuck curved concave or convex in the surface and warped along the surface of the vacuum chuck by vacuum suction, characteristics of a semiconductor device formed on the wafer are measured.</p> |
