发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE
摘要 <p>PURPOSE:To decrease the interlayer defects in the intersected parts of electrodes and to produce display parts at a high yield by disposing conductors for shunt to the shape of intersecting with 4 pieces of the balance lines of drain electrodes. CONSTITUTION:The shunt conductors 8 are disposed to the shape intersecting with 4 pieces of the drain buss lines 5' simultaneously when the gate electrodes 2 and the gate bus lines 2' are formed on a glass substrate. The drain buss lines 5' on both sides B, B' in the short-circuit part are cut by a laser beam, etc., when the gate bus line 2' and the drain bus line 5' cause an interlayer shorting in the intersected parted painted out black. The transistors of the array below B' are disabled by this cutting but the intersected parts C, C' of the shunt conductors 8' and the drain buss lines 5' shorted to supply a drain voltage to the lower array of B' as well, by which the TRs are normally operated.</p>
申请公布号 JPH04147224(A) 申请公布日期 1992.05.20
申请号 JP19900272572 申请日期 1990.10.11
申请人 NEC CORP 发明人 SATO YOSHIHIKO
分类号 G02F1/136;G02F1/1368;H01L21/82;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/136
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