| 摘要 |
<p>The element consists of a diode and condenser in series, formed on opposite sides of a silicon slice. For instance a PIN diode is formed by a p+ diffusion into an N on N+ epitaxial layer. On the opposite side of the slice the condenser is formed with N+ substrate as one plate, thermally grown SiO2 as the dielectric and a deposited metal layer as the other plate. Contact to the common layer is by a deep N+ diffusion. Using SiO2 with dielectric constant of 4 and breakdown voltage of 600 V/mu capacitances of 10-50 pF are obtd. giving good decoupling in the microwave region.</p> |
