| 摘要 |
<p>PURPOSE:To provide thin electric machinery generating no crack even when external force such as bending or twist is applied and not peeled from a substrate main body by forming a semiconductor circuit on the silicon film formed on a thin metal substrate having heat resistance. CONSTITUTION:A thin metal substrate 10 is formed from a heat-resistant material not deteriorated even at the high temp. in a manufacturing process, for example, SUS with 0.1mum thickness. A silicon Si film is formed on the surface of the substrate 10 and a semiconductor circuit 12 is formed thereon by respective processes of etching using a resist pattern, diffusion, ion implantation or membrane formation. A resistor is formed to an F1-region, a diode is formed to an F2-region and a transistor is formed to an F3-region to prepare an IC chip 13. Therefore, even when external force such as bending or twist is applied to the IC chip 13, the IC chip 13 is not cracked.</p> |
