| 摘要 |
PURPOSE:To prevent light from being made incident on an offset part from the side of a glass substrate and to prevent a semiconductor layer from deteriorating by providing a light-shielding insulating film on the glass substrate side of a switching element. CONSTITUTION:The offset area is provided to a gate electrode 2 so as to increase the dielectric strength of the switching element Q2 and the light- shielding gate insulating film 31 is formed on the electrode 2. The insulating film 31 is formed of a material which cuts off light and has heat resistance, e.g. inorganic film of a-SixC1-x (x<=0.5), PrMnO4, etc., to prevent light from being made incident on a semiconductor layer 4 from the side of the glass substrate 1 and also preclude deterioration and damage during manufacture processes of respective film stuck on the insulating film 31.
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