| 摘要 |
<p>PURPOSE:To miniaturize an apparatus by irradiating a part of a strain gauge with laser beam to change the size of a part of crystal particles to set the irradiated part to a desired resistance value. CONSTITUTION:An insulating layer composed of oxidized silane is formed to the surface of a substrate 1 by a P-CVD method and reaction gas consisting of silane and diborane is used to form an amorphous silicon membrane doped with boron on the surface of the insulating layer. Next, a place where strain gauges 21 - 24 are formed is irradiated with excimer laser beam and annealing is applied thereto to modify a part of the amorphous silicon membrane to polysilicon and predetermined patterning is performed to form the strain gauges 21 - 24. Next, when excimer laser is applied to the width (a) of the strain gauge 24 to again apply laser annealing to the strain gauge 24, polysilicon of the irradiated part is re-crystallized as large crystal particles and the resistance value of the strain gauge 24 becomes about 1.5 KOMEGA. Therefore, since the other strain gauges 21 - 23 are not necessarily accurately formed so as to have a resistance value 1.5 KOMEGA, laser annealing is applied to the strain gauges 21 - 23 while voltage is applied to an electrode 3 and output is checked to make it possible to achieve the equilibrium of a bridge.</p> |
