METHOD FOR DOPING III-IV COMPOUND SEMICONDUCTOR LAYER WITH CARBON,申请号JP19900156561-传众专利搜索

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发明名称	METHOD FOR DOPING III-IV COMPOUND SEMICONDUCTOR LAYER WITH CARBON
摘要
申请公布号	JPH0448622(A)	申请公布日期	1992.02.18
申请号	JP19900156561	申请日期	1990.06.14
申请人	SANYO ELECTRIC CO LTD	发明人	NOMURA YASUHIKO
分类号	H01L21/223;H01L21/22	主分类号	H01L21/223
代理机构		代理人
主权项
地址

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