| 摘要 |
A trench-gate power device, for example a MOSFET, has a semiconductor body (10), for example of monocrystalline silicon, comprising a plurality of side-by-side body regions (3) which accommodate parallel conduction channels (12) adjacent the trench-gate structure (33, 23, 20) of the device. The channels (12) are connected in parallel between a first main electrode (21) which is common to side-by-side source regions (1) and a second region (2) which is common to the side-by-side body regions (3). The side-by-side source regions (1) comprise a layer (11) of narrow-bandgap semiconductor material (SixGe(1-x)) which is deposited on a major surface (10a) of the body (10) to form a source p-n heterojunction (31) with the side-by-side body regions (3) of the body (10). This narrow-bandgap semiconductor material (SixGe(1-x)) serves to suppress second breakdown of the power device, so improving its ruggedness. Advantageously, at least some of the body regions (3) are short-circuited to the electrode (21) so as to determine their potential.
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