| 摘要 |
PURPOSE:To prevent the leak defect of light shielding layers and transparent electrode films and to form the light shielding layers having high chemical resistance by patterning an opaque metallic layer by etching as the light shielding layers and forming the transparent electrodes. CONSTITUTION:A transparent polyimide resin 4 to form an insulating layer is formed atop the light shielding layers 3 and silicon oxide (SiO2)5 which is an inorg. thin film is formed by a sputtering method on the film 4 to form the uniform inorg. thin film 5 of 100 to 2000Angstrom thickness over the entire surface. Further, ITO which is the transparent electrode film 6 is formed atop the thin film 5 over the entire surface by the sputtering method and thereafter, a photoresist is uniformly applied atop this film 6 by a spin coater or the like and is exposed by a mask exposing method after a prebaking treatment. The photoresist if then subjected to developing, rinsing and post baking treatment, by which the photoresist layers of prescribed patterns are formed. The transparent electrode film 6 of the exposed parts is etched away with the resist layer as a mask, by which the photoresist is removed and the striped transparent electrodes 6 are formed. |
