| 发明名称 |
QUANTUM WIRE FABRICATED VIA PHOTO INDUCED EVAPORATION ENHANCEMENT DURING IN SITU EPITAXIAL GROWTH |
| 摘要 |
In situ removal of selected or patterned portions of quantum well layers is accomplished by photo induced evaporation enhancement to form quantum wire, patterned quantum wire and multiple quantum wires in a semiconductor structure. |
| 申请公布号 |
CA2041942(A1) |
申请公布日期 |
1991.12.26 |
| 申请号 |
CA19912041942 |
申请日期 |
1991.05.07 |
| 申请人 |
XEROX CORPORATION |
发明人 |
PAOLI, THOMAS L.;EPLER, JOHN E. |
| 分类号 |
H01L21/20;H01L21/205;H01L21/268;H01L29/06;H01L29/201;H01L29/80;H01S5/00;H01S5/34 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
