Self-aligned masking for ultra-high energy implants with application to localized buried implants & isolation structures.

摘要

A self-aligned masking process for use with ultra-high energy implants (implant energies equal to or greater than 1 MeV) is provided. The process can be applied to an arbitrary range of implant energies. Consequently, high doses of dopant may be implanted to give high concentrations that are deeply buried. This can be coupled with the fact that amorphization of the substrate lattice is relatively localized to the region where the ultra-high energy implant has peaked to yield a procedure to form buried, localized isolation structures.