VORRICHTUNG ZUM ENTKERNEN VON GUSSSTUECKEN.,申请号AT19890100306T-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	VORRICHTUNG ZUM ENTKERNEN VON GUSSSTUECKEN.
摘要
申请公布号	AT68733(T)	申请公布日期	1991.11.15
申请号	AT19890100306T	申请日期	1989.01.10
申请人	''F.U.K.'' FROELICH & KLUEPFEL DRUCKLUFTTECHNIK GMBH & CO. KG	发明人	FUENFHAUSEN, DIETER;HEPPEL, GUENTER;RUPPERT, HARRY;SCHMIDT, DIETER
分类号	B22D31/00;(IPC1-7):B22D31/00	主分类号	B22D31/00
代理机构		代理人
主权项
地址

您可能感兴趣的专利

METHOD AND SYSTEM FOR PROVIDING VIRTUAL PROTOCOL INTERLAYER BETWEEN TWO PROTOCOL LAYERS IN COMMUNICATION STACK

METHOD OF MANUFACTURING DUAL GATE SEMICONDUCTOR DEVICE USING TWO-STEP N+ ION-IMPLANTATIONS FOR IMPROVING POLY DEPLETION

METHOD OF FORMING DAMASCENE PATTERN OF SEMICONDUCTOR DEVICE USING OUT PHASE PULSE MODULATION AND SOURCE PULSE MODULATION FOR PREVENTING MICRO-TRENCH FROM BEING GENERATED AT BOTTOM CORNER OF PATTERN

METHOD FOR CONTROLLING THE DELAY TIME IN SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY CONTROLLING THE AMOUNT OF DELAY ARBITRARILY

METHOD OF FORMING STABLY ULTRA-FINE PATTERN OF SEMICONDUCTOR DEVICE USING DOUBLE SILYLATION AND POLYMER SPACER

METHOD OF INSPECTING SEMICONDUCTOR DEVICE TO ECONOMIZE COST AND TIME NECESSARY TO SET VARIABLES ON SAME PROCESS AGAIN

METHOD FOR MEASURING THE THICKNESS OF NANO-METER SIZED THIN FILMS USING INDENTATION TEST FOR MEASURING THICKNESS OF THIN FILM ONLY THROUGH INDENTATION TEST WITHOUT COMPLEX TEST SAMPLE PREPARING PROCESS

GAIN CONTROL METHOD AND A GAIN CONTROL RECEIVER FOR PERFORMING THE GAIN CONTROL METHOD, ESPECIALLY CORRELATED TO STABLY CONTROLLING A GAIN REGARDLESS OF THE NUMBER OF CONTROL BITS OF A PGA AND CHANNEL FEATURES

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DUAL WELL OXIDE LAYER FOR IMPROVING ELECTRICAL PROPERTIES

METHOD OF MANUFACTURING FLASH MEMORY DEVICE USING NON-SELECTIVE ETCHING BETWEEN DIELECTRIC FILM AND CONDUCTIVE FILM FOR PREVENTING DIELECTRIC FENCE WITH HIGH ASPECT RATIO

METHOD OF FORMING CAPACITOR OF SEMICONDUCTOR DEVICE USING NITRIDE LAYER AS PHOSPHOR DIFFUSION BARRIER TO SECURE HIGH PHOSPHOR CONCENTRATION IN DEPLETION REGION CAPACITOR

METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE USING MIXED GASES OF CBr4 AND O2 FOR PREVENTING SURFACE DAMAGE AND HYDROCARBON POLYMER

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH N TYPE ION-DIFFUSED REGION FOR RESTRAINING LEAKAGE CURRENT

METHOD OF MANUFACTURING HIGH DIELECTRIC CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE USING ION-IMPLANTATION AND HEAT TREATMENT TO IMPROVE CAPACITANCE

METHOD OF FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE TO REDUCE SURFACE RESISTANCE BETWEEN CONTACT PLUG AND UPPER ELECTRODE AND RESTRAIN REACTION OF Ti ON WF6 GAS

METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE TO PREVENT CONTACT BETWEEN ADJACENT CAPACITORS AND INCREASE CAPACITANCE

METHOD OF MANUFACTURING DUAL GATE OXIDE LAYER USING DIFFERENT ION SOURCES TO CONTROL OXIDATION DEGREE ADEQUATE FOR CORRESPONDING REGION

PATTERN FORMING METHOD OF SEMICONDUCTOR DEVICE FOR SIMPLIFYING FORMING PROCESSES AND ECONOMIZING FABRICATION COSTS

APPARATUS FOR COUPLING SUBSTRATES OF AN LCD TO PREVENT DAMAGE OF A VACUUM PUMP DUE TO VOLATILIZATION OF LIQUID CRYSTALS

INTERNET TELEPHONE SERVICE SYSTEM AND A METHOD FOR SUPPLYING A CALL CONNECTION SOUND DESIGNATED BY A RECEIVER, ESPECIALLY CONCERNED WITH PREVENTING COLLISIONS BETWEEN VOICE DATA RECEIVED FROM A RECEIVER TERMINAL AND A CALL CONNECTION SOUND DESIGNATED BY A RECEIVER