| 摘要 |
PURPOSE:To enable a wafer in defective flatness to closely adhere to the stage of a flat aligner without rolling up air in the stage for flattening the surface of the wafer thereby enabling the fine patterns to be formed. CONSTITUTION:After forming silicon films on the surface and rear surface of a silicon wafer 1 by thermal oxidation process, a resist film 3 is formed on the rear surface and then exposed in specific patterns and developed so as to form continuous trench type resist patterns. Next, after etching away the films 2 using the patterns 3a as masks, the wafer 1 is etched away to form the continuous trenches 4 reaching both ends. Then, the multiple trenches reaching both ends of the wafer 1 are formed on the rear surface of the wafer 1. Through these procedures, the wafer 1 in defective flatness can closely adhere to the stage of a flat aligner for flattening the surface of the wafer without rolling up air in the stage, thereby enabling the fine patterns 3a to be formed. |
