发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To reduce an improper opening of an Al pad and an input protective resistor due to overetching at the time of forming a contact hole by forming a conductor layer under the resistor in the connection part of the resistor made of polysilicon to the pad. CONSTITUTION:An input protective resistor 4 made of polysilicon provided on a semiconductor substrate 1 and a pad 6 made of Al to be connected to the resistor 4 are provided. In this case, a conductor layer 3 is provided at the lower part of the resistor 4 at the connection part of the resistor 4 to the pad 6. That is, the layer 3 is provided at the lower part of the resistor 4 under a contact hole 8. Accordingly, even if the resistor 4 is etched to form an overetched part 9 by overetching at the time of formation of the hole 8, the resistor 4 is connected to the pad 6 through the layer 6. Thus, an improper opening can be eliminated.</p>
申请公布号 JPH03214760(A) 申请公布日期 1991.09.19
申请号 JP19900009694 申请日期 1990.01.19
申请人 NEC CORP 发明人 YOSAKO TOSHIHIRO
分类号 H01L23/522;H01L21/768;H01L21/822;H01L23/62;H01L27/04 主分类号 H01L23/522
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