| 发明名称 |
Semiconductor laser device |
| 摘要 |
A semiconductor laser device having a relative wide active region and a distributed Bragg reflector facet wherein a relative high reflectance region one third of the active region width is centrally disposed on a surface of the laser through which light is emitted.
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| 申请公布号 |
US5043994(A) |
申请公布日期 |
1991.08.27 |
| 申请号 |
US19900523545 |
申请日期 |
1990.05.15 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
IKEDA, KENJI;SHIGIHARA, KIMIO |
| 分类号 |
H01S5/00;H01S5/125 |
主分类号 |
H01S5/00 |
| 代理机构 |
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代理人 |
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