| 摘要 |
<p>PURPOSE: To prevent leakage current by forming a first gate electrode on a glass substrate with a second metal thin film, forming a second gate electrode on it with a second metal thin film and eliminating pin holes in the gate elec trode, and forming at least two gate insulating layers between the gate electrode and the semiconductor layer. CONSTITUTION: A first gate electrode 2a and a storage capacitor 9 are formed on a glass substrate 1. Then, the first gate electrode 2a is coated with a Ta film and a second gate electrode 2b is formed, a first gate insulation layer 3a made of Ta2 O5 film is formed by utilizing the anode oxidation method, and a second gate insulating layer 3b is formed by depositing SiO2 . Then, after a pixel electrode 8 is formed on the second gate insulating layer 3b, SiO2 has been coated and a third gate insulating layer 3c is formed. Since a pin hole in the first gate electrode can be eliminated when formed the second gate electrode, and electric short-circuiting with a source electrode 6 and a drain electrode 7 can be prevented in advance.</p> |
