发明名称 Power semiconductor device with heat dissipating property.
摘要 <p>A power semiconductor device such as power thyristor including a semiconductor substrate (1) which is clamped by first and second conductive members (3,9) serving as the electrodes as well as heat sinks, and a plurality of heat pipes (5,6) whose ends are inserted directly into the conductive members (3,9). A plurality of semiconductor substrates and temperature compensating plates are alternatively stacked one on another and conductive members are provided on outermost temperature compensating plates to form an assembly. The assembly is hermetically sealed by an insulating package (4) formed by an insulator having a corrugated outer surface such that outer surfaces of the conductive members are exposed out of the package. Alternatively, one or more heat pipes are inserted into the insulating package such that electrically insulating cooling medium filled in the heat pipes can be directly made into contact with the semiconductor substrates. <IMAGE></p>
申请公布号 EP0441572(A2) 申请公布日期 1991.08.14
申请号 EP19910300885 申请日期 1991.02.04
申请人 NGK INSULATORS, LTD. 发明人 ISHIBASHI, CHIHIRO;ABE, HIROYUKI;MATSUOKA, SUSUMU
分类号 H01L23/427;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/427
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