| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
A method for forming a phosphor silicate glass (PSG) layer on a semiconductor substrate (50) containing semiconductor elements comprises forming first to third PSG films (51,52,53) sequentially by a chemical vapor deposition (CVD) process while varyign the P concentration to increase gradually from the substrate towards the top surface of the PSG layer; and heat-treating the PSG films (51,52,53) to redistribute the P concentration. The method gives smooth edge profiles on etching and avoids the cutoff of the other layers to improve the quality and yield rate of the semiconductor device.
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| 申请公布号 |
KR910006093(B1) |
申请公布日期 |
1991.08.12 |
| 申请号 |
KR19880008039 |
申请日期 |
1988.06.30 |
| 申请人 |
SAM SUNG ELECTRONICS CO.,LTD. |
发明人 |
KIM NAM-YUN;PARK SI-CHOON |
| 分类号 |
H01L21/3205;H01L21/223;H01L21/30;H01L21/311;H01L21/316;H01L21/768;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/3205 |
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