METHOD FOR FLATTING PHOTORESISTS WITH ULTRAVIOLET RAYS

摘要

The photoresist layer is planarized with ultraviolet radiating for a few second. The photoresist containing a sensitizer, resin, solvent, and another additives is transformed into the ketene by radiating the characteristic wave (350-450nm) of ultraviolet, which is finally transformed into indenecarboxylic acid by reaction with water of resist. This method provides the advantage for reducing the process time in multilevel resist lithography.