| 摘要 |
PURPOSE:To make the surface of a resist hard to dissolve without using a wet process by a covering the substrate layer with a resin which is penetrated comparatively with ease by a first irradiation beam to become a positive type and then penetrated comparatively with difficulty by a second irradiation beam to be transformed into a negative type. CONSTITUTION:A novolak-based positive-type resist 10 for I-line use is formed on a substrate 1. Said resist 10 is transformed into a positive type by I-line or the like which are continuous, whose optical intensity is comparatively weak and which is generated by using, e.g. a mercury lamp, which is cross-linked and transfermed into a negative type by an excimer laser beam such as, e.g. a KrF laser which is like a pulse and whose optical intensity per pulse is comparatively large; the former beam is comparatively easy to transmit and the latter beam is comparatively hard to transmit. Said resist 10 is irradiated with I-line 4 via a photomask 3 having a desired pattern; an exposed part 11 is transformed into the positive type. Then, the whole surface of the resist 10 is exposed to an excimer laser beam 100; the surface is transformed into a hard-to-dissolve layer 6. Then, the layer is developed; the exposed part 11 is dissolved; a metal film 7 is vapor-deposited; the resist 10 is removed; a desired pattern of the metal film 7 is formed. |
