MANUFACTURING METHOD OF HIGH ELECTRON MOBILITY TRANSISTOR

摘要

The method comprises the steps of growing a buffer layer (5) and an AlGaAs layer (4) onto a substrate (6); plasma etching the AlGaAs layer (4) to leave a gate region; ion-implanting Si ions into the source and drain regions of the buffer layer to form an ion implantation layer (7); forming source, drain and gate electrodes of a transistor by using a lift-off method. The ion implantation is peformed on the buffer layer (5) without the interposition of the n+GaAs and AlGaAs layers to reduce the number of process. The method improves the transfer conductance and frequency properties.