Method of manufacturing zinc chalcogenide semiconductor devices using LP-MOCVD

摘要

A method of growing zinc chalcogenide in an atmosphere which contains the vapor of di- pi -cyclopentadienyl manganese or di- pi -alkyl cyclopentadienyl manganese that serves as a source of manganese. By growing zinc chalcogenide in the above atmosphere, there is obtained a manganese-doped zinc chalcogenide having a very high crystal quality, which is very suitable for the active layer in light emitting devices.