发明名称 |
Thin film esp. for superconductor structure prodn. - by high temp. photo-lacquer lift-off process |
摘要 |
A thin film structure prodn. process comprises (a) covering a substrate with a photolacquer layer which is then photolithographically structured to expose the surface region(s) to be thin film coated; (b) applying a thin film (e.g. by vapour deposition, sputtering, laser ablation etc) partially directly on the substrate and partially on the residual photolaquer, (c) completely ashing, the residual photolacquer in an oxygen-contg. gas mixt. or a pure oxygen atmos. at elevated temp; and (d) mechanically or ultrasonically removing the thin film portion which was previously on the photolacquer. USE/ADVANTAGE - The process is esp. useful in prodn. of oxidic high Tc superconductor thin films. It is a modified lift-off process which allows in situ structuring of the thin film and can be carried out at high temps. (above 200 deg.C) without the need for a metal mask.
|
申请公布号 |
DE3941130(A1) |
申请公布日期 |
1991.06.20 |
申请号 |
DE19893941130 |
申请日期 |
1989.12.13 |
申请人 |
KOCH, HANS, DR., 1000 BERLIN, DE |
发明人 |
KOCH, HANS, DR., 1000 BERLIN, DE |
分类号 |
G03F7/40;G03F7/42;H01L21/027;H01L21/70;H01L39/24 |
主分类号 |
G03F7/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|