| 摘要 |
PURPOSE: To provide a method for forming an etch barrier such that a wide range of metallic ions in a polyamino acid layer can be taken by taking the metallic ions in an exposed part and exposing part of a substrate by performing reactive ion etching(RIE) on the system, and then forming a masked relief structure. CONSTITUTION: A substrate 10 made of silicon, etc., is coated with a passivation layer or a dielectric polymer layer 11. The layer contains a free carboxyl group and is overcoated with a resist material 12. Then an interconnecting layer (a) is formed by exposing and developing the resist layer, and cations are taken in the polymer layer through diffusion and ion exchange by bringing the polymer layer into contact with an aqueous solution containing the cations under a weak acidic condition. When the area, not coated with the resist nor with the polymer mask and the part of the substrate below the area, are removed by RIE plasma etching, a masked relief structure of the polymer is left. Therefore, an RIE barrier-forming method by which a wider range of metallic ions can be taken in a polyamino acid layer can be obtained. |
