发明名称 |
Radiation hardened complementary transistor integrated circuits |
摘要 |
Integrated circuits with vertical isolated trenches are radiation hardened by providing vertical gate segments, preferably, of doped polycrystalline silicon, in the trenches and connected at the bottom of the trenches to a region of the same conductivity type. The surface devices may be complementary and the vertical gates may also be complementarily doped. A method of fabrication is described for a single crystal wafer, as well as SOI.
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申请公布号 |
US5021359(A) |
申请公布日期 |
1991.06.04 |
申请号 |
US19890416419 |
申请日期 |
1989.10.03 |
申请人 |
HARRIS CORPORATION |
发明人 |
YOUNG, WILLIAM R.;RIVOLI, ANTHONY L.;WILES, JR., WILLIAM W. |
分类号 |
H01L21/765;H01L27/092;H01L27/12 |
主分类号 |
H01L21/765 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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