发明名称 |
THIN-FILM TRANSISTOR AND DRIVING CIRCUIT BUILT-IN TYPE LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
<p>PURPOSE:To shorten the operating time of respective elements and to simplify circuits by forming the channel parts formed on different substrates of single crystals. CONSTITUTION:After the thin film parts of the Si single crystals formed on the transparent substrate 1 are formed as the channel parts 2, semiconductor thin films 3 added with an (n) type impurity are selectively formed and a gate insulating film 4 is formed; thereafter, contact holes are opened and source and drain electrodes 5 and gate electrodes 6 are formed to constitute this liquid crystal display device. The channel parts 2 of the thin-film transistors are made of the single crystals in such a manner, by which the influence of the crystal grain boundaries specific to a polycrystal structure is averted and the mobility is greatly improved. The operating time of the respective elements is shortened in this way and the circuits are simplified.</p> |
申请公布号 |
JPH0365928(A) |
申请公布日期 |
1991.03.20 |
申请号 |
JP19890203371 |
申请日期 |
1989.08.05 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KOSEKI HIDEO;KAWAMURA TOSHIO;TSUKIKAWA YASUHIKO |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;H01L21/336;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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