| 摘要 |
PURPOSE:To obtain flat LOCOS oxide film by a short process and improve the reliability and obtain a fine element by forming LOCOS oxide film after forming amorphous layer on the surface of a semiconductor substrate. CONSTITUTION:Inert impurity, for instance argon, is ion-injected into the surface of a silicon substrate 11 and amorpous layer 14 is formed. After silicon nitride film 15 is formed, an aperture is made by removing the silicon nitride film 15 partially. The silicon substrate 11 is removed partially to the required depth by etching through this aperture 16. The oxidization is carried out using the silicon nitride film 15 as a mask and LOCOS oxide film 17 is formed on the silicon substrate. |
