发明名称 BLANK FOR PHOTOMASK
摘要 PURPOSE:To facilitate a dry etching process and to form fine patterns with high accuracy by forming different kinds of metallic thin films in multiple layers on a glass substrate. CONSTITUTION:A light shieldable metallic thin film 2a is first formed as a 1st layer by sputtering on the glass substrate 1 which is mask substrate, then the light shieldable metallic thin film 2b of the different kind is formed as a 2nd layer by sputtering thereon. Further, an electron beam positive resist is applied thereon. Patterns are exposed on the electron beam positive resist 3 by an electron beam and the resist is subjected to developing and post baking; further, the light shieldable metallic thin film 2b of the upper layer is subjected to the dry etching and thereafter, the electron beam positive resist 3 is peeled. The light shieldable metallic thin film 2a of the lower layer is then dry etched to remove the remaining light shieldable metallic thin film 2b of the upper layer over the entire surface. The photomask which has the sufficient dry etching resistance, is finer and has the high accuracy is formed in this way.
申请公布号 JPH02304562(A) 申请公布日期 1990.12.18
申请号 JP19890127110 申请日期 1989.05.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 IMAI TADAYOSHI
分类号 G03F1/58;H01L21/027 主分类号 G03F1/58
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