| 摘要 |
PURPOSE:To prevent damage during production process and make the thickness of an n-type semiconductor substrate 1 to be thinner by enabling an electrode and a semiconductor substrate sandwiching an insulating film to be at the same potential during production process and by preventing insulation failure of the insulating film such as a gate insulating film during production process from occurring. CONSTITUTION:A gate oxide film 2, a field oxide film 20, an N<+> diffusion layer 60, a gate electrode 3, an interlayer insulation film 4, and a conductor layer 50 are formed on the main surface of an n-type semiconductor substrate 1 and through holes 7 and 8 are opened at the insulating film 4. Then, the conductor layer 50 is etched with a photoresist 9 as a mask, thus forming a wiring 5. At this time, the electrode 3 and the substrate 1 are at the same potential since they are connected by the wiring 5 during etching and after etching is completed. After that, the resist 9 is eliminated by oxygen plasma, thus preventing dielectric breakdown of the gate oxide film from occurring, forming wirings 51 and 52 newly by etching specified positions of the wiring 5, and forming a capacitive element consisting of the electrode 3 and the substrate 1. |
