摘要 |
<p>A cross-coupled stripe laser array in which a substrate (10) is formed with parallel grooves (12) extending part way (LG) across the substrate and an area (LP) adjacent interior ends of the grooves is left planar. The orientations of the substrate and the grooves are chosen so as to produce differential epitaxial growthrates between the areas (LG) overlying the grooves and the area (LP) overlying the planar portion. A vertically confining optical structure (18, 22, 22, 24, 26) is then deposited over both the grooved and planar portions. The structure includes a quantum well region (22), the bandgap of which depends upon its thickness. Electrical contacts (32) are applied over the grooved regions. Thereby, the lasers overlying the grooves lase at a wavelength to which the equivalent structure overlying the planar portion is transparent, thus providing coupling between the stripe lasers.</p> |