| 摘要 |
PURPOSE:To prevent the breakdown and the deterioration in characteristics of a semiconductor pellet by heating process from occurring by a method wherein specified elements are irradiated with laser beams to be locally heated at the optimum temperature for thermal pressure fixation. CONSTITUTION:The title wire bonding device is provided with a lead frame 1 loaded with a semiconductor pellet 2, a capillary 7 fitted with a wire 8 and a laser beam irradiation devices 10. Then, only the semiconductor pellet 2 to be wire-bonded and the inner leads 5 of the leadframe are irradiated with laser beams 12 using the laser beam irradiation devices 10 to locally heat the said elements 2 and 5 at the optimum temperature required for thermal pressure fixation and then the electrode pads 3 of the semiconductor pellet 2 and the other inner leads 4 heatad using the capillary 7 are connected by the wire 8. Through these procedures, the other semiconductor pellet 2 and leadframe are not heated for unnecessarily long time thereby the breakdown or the deterioration in characteristics of the semiconductor pellet can be prevented from occurring. |
