| 摘要 |
<p>There is disclosed a method of manufacturing an integrated circuit, comprising: the first step of growing a first epitaxial crystal on a compound semiconductor substrate (1), removing an unnecessary region of the first epitaxial crystal to form a residual portion (5), and covering the residual portion (5) with a selective growth mask (6), the second step of growing a second epitaxial crystal on an exposed substrate portion (1), removing an unnecessary portion of the second epitaxial crystal to form a residual portion (15) of the second epitaxial crystal, and covering the residual portion (15) of the second epitaxial crystal with a selective growth mask (19), and the third step of growing a third epitaxial crystal (11) on an exposed substrate portion (1) and removing an unnecessary region of the third epitaxial crystal (11), wherein the first to third epitaxial crystal (5,15,11) form any one of a pin photodiode crystal (16), a heterojunction bipolar transistor crystal (17), and a high electron mobility transistor crystal (18), and are different from each other.</p> |
