| 摘要 |
PURPOSE:To prevent the increase of forward voltage by using dry etching method in the final etching process. CONSTITUTION:A resist mask 9 is formed: an aperture 10 is formed by using a photo mask having an aperture in a Schottky contact electrode aperture forming region; the film 9 having the aperture 10 is used as a mask, and wet etching is performed for about 120 seconds by using hydrofluoric acid and the like; a silicon dioxide film 7 exposed in the aperture 10 is etched and eliminated by a thickness of about 1600Angstrom , thereby forming a first aperture 11 with a gentle slope on the periphery. By using the film 9 as it is, and using carbon tetrafluoride and hydrocarbon trifluoride, reactive ion etching is performed at a pressure of 3Torr for about 120 seconds; about 4000Angstrom thickness is etched and eliminated, thereby forming a second aperture 12 reaching an N-type silicon laver 2. Thus, the aperture 12 is so formed that the shape is excellent in coverage of an electrode to be formed. Since a modified film is not formed, the forward bias can be stabilized so as to be equal to or less than 0.46V. |
