发明名称 PHOTOMASK AND PHOTOMASK BLANK
摘要 PURPOSE:To reduce an average grain size and to obtain a smooth film structure by using NiCr:N (nitrogen-added nichrome alloy) for a light shielding layer. CONSTITUTION:Three layers; a layer in which nickel is added to chromium, a layer in which nitrogen is added to a nickel-chromium alloy and a layer in which oxygen and nitrogen are added to chromium, are successively formed on a transparent substrate. Namely, the particles grow larger than Cr, Cr:N:C, etc., if only the NiCr is used but the particle size is drastically reduced if N is added to the NiCr alloy. For example, the average grain size decreases from 70Angstrom to about 15Angstrom and the film having no cracking structure is obtd. if about 10% N is added to 80 to 20% NiCr. The finer average grain sizes are obtd. in this way and the smooth film structure is obtd.
申请公布号 JPH02212841(A) 申请公布日期 1990.08.24
申请号 JP19890034169 申请日期 1989.02.14
申请人 TOPPAN PRINTING CO LTD 发明人 MURAKI AKIRA
分类号 G03F1/50;G03F1/58;H01L21/027;H01L21/30 主分类号 G03F1/50
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