| 摘要 |
The invention relates to a device for spot size measurement at wafer level in a multi charged partiele beam lithography system, comprising knife edge structures on top of a seintillating material, wherein the knife edge structures are arranged in a Si wafer, wherein the knife edge structures comprise one or more elongated trenches, wherein each of said one or more elongated trenches comprises a knife edge arranged at a longi tudinal edge of said one or more elongated trench. The invention relates in addition to a method for determining the spot size of an individual beam in a multi charged partiele beam lithography system, using such a device. |
