| 摘要 |
Integrated semiconductor device including at least one Y-shaped optoelectronic switching element, this element comprising: a straight input guide, a first output guide lined up with the input guide, a second output guide making a small angle 28 with the first, these guides being composed for example of a heterostructure of III-V materials including a substrate S and a guiding layer Cg, and being provided with an external guide strip R; this element also comprising: a p-n junction arranged with respect to the guides in such a way that in the passive state it allows transmission of the input beam into the said first output guide, and that in the active state it allows reflection of the input beam in the said second output guide, characterised in that it comprises first means for minimising the losses when the p-n junction is active including the application of a current density of a value chosen as optimal, and second means for minimising the losses when the junction is passive including a structure for confining the light, the said first and second means cooperating so that the outputs from the switching element are balanced. Application: optical switching matrices in telecommunications. <IMAGE>
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