| 摘要 |
A BICMOS semiconductor device (20) and method for its fabrication is disclosed. Bipolar, PMOS, and NMOS transistors (22, 26, and 28) are isolated from one another by a P type channel stop (54) implantation step prior to formation of a field oxide (56). An N type channel stop (64) implantation step occurs after the field oxide (56) formation. In addition, the N type channel stop (64) implantation step utilizes the same mask as is used to implant N dopant which forms a deep collector region (62) for the bipolar transistor (22).
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